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Transient Simulation

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CMOS image sensor pixels are time-varying devices, whose current state depends strongly on its history of operation. To characterize the optoelectronic performance of an image sensor, the transient response can be used to accurately set the initial conditions for the device and measure its response to a variety of optical exposures both in terms of intensity and in terms of duration. In this topic we discuss the the simulation techniques required for the transient simulation of the CMOS image sensor pixel electrical response under varying illumination conditions.

 

Solvers

CHARGE

Associated files

cis-pulse-1fF-200us.ldev

cis_transient_analysis.lsf

See also

CMOS image sensors

Related publications

F. Hirigoyen, A. Crocherie, J. M. Vaillant, and Y. Cazaux, “FDTD-based optical simulations methodology for CMOS image sensors pixels architecture and process optimization” Proc. SPIE 6816, 681609 (2008)

 

Wang, Xinyang, "Noise in Sub-Micron CMOS Image Sensors", Ph.D. Thesis, Delft University of Technology

cmos_screenshot

 

 

 

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