Please enable JavaScript to view this site.

Application Gallery

Navigation: Other Applications

Electronic Components

Scroll Prev Top Next More

Lumerical's powerful drift-diffusion solver CHARGE is capable of modeling steady-state and transient behavior of charge carriers in semiconductors.  It can not only be used in conjunction with Lumerical's FDTD, MODE, and INTERCONNECT to simulate optoelectronic devices, but also to simulate a wide range of solid-state devices starting from p-n junction diodes to MOSFETs.  In this section, we offer a few examples of the use of CHARGE in simulating electronic circuit components.

p-n junction diode

A p-n junction is probably the most basic building block of a semiconductor device.  In this example, we provide detailed instructions on how to build a simple p-n junction diode, simulate it using CHARGE, and analyze the results.


Silicon diode

In this example, we take the simulation of diode one step further.  We discuss the implementation of the breakdown characteristics of a silicon diode and provide step by step instructions on how to simulate a silicon diode in the breakdown region considering the effects of impact ionization and band-to-band tunneling.


GaAs PIN diode

In this example, we describe the simulation of a gallium arsenide PIN diode. We look at the different mechanisms of recombination, including Auger and radiative recombination in GaAs and how they are influenced by the dopant distribution and the applied bias.



This example describes how to simulate the electrical behavior of an n-channel metal oxide semiconductor field effect transistor (MOSFET). In particular, we calculate the gate and drain IV characteristics as well as the leakage current due to trap assisted and band to band tunneling.


Copyright Lumerical Inc. | Privacy | Site Map